(Solved): Silicon at \( T=300 \mathrm{~K} \) is doped with arsenic atoms such that the concentration of elec ...

Silicon at \( T=300 \mathrm{~K} \) is doped with arsenic atoms such that the concentration of electrons is \( n_{0}=7 \times 10^{15} \mathrm{~cm}^{-3} \). (a) Find \( E_{c}-E_{F} \). \( (b) \) Determine \( E_{F}-E_{v} \). (c) Calculate \( p_{0} .(d) \) Which carrier is the minority carrier? (e) Find \( E_{F}-E_{F i} \).