Question 2.7 A (111) Si wafer has gone through (a) low-pressure chemical vapor deposition (LPCVD) silicon nitride deposition and patterning (only on the front side), (b) RIE of silicon, (c) another silicon nitride deposition, and (d) RIE of silicon, as shown below. If the wafer is now etched in $KOH$ for a very long time, what will be the resulting cross-section?

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Question 2.7 A (111) Si wafer has gone through (a) low-pressure chemical vapor deposition (LPCVD) silicon nitride deposition and patterning (only on the front side), (b) RIE of silicon, (c) another silicon nitride deposition, and (d) RIE of silicon, as shown below. If the wafer is now etched in

KOH

for a very long time, what will be the resulting cross-section?

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