(Solved): GaAs has an effective density of states at the conduction band edge of \( N_{c}= \) \( 4.7 \times ...

GaAs has an effective density of states at the conduction band edge of \( N_{c}= \) \( 4.7 \times 10^{17} \mathrm{~cm}^{-3} \), an effective DOS at the valence band edge of \( N_{V}=7 \times 10^{18} \mathrm{~cm}^{-3} \), and a room temperature bandgap of \( 1.42 \mathrm{eV} \). Calculate the intrinsic electron concentration. Why is the effective DOS at the band edges different for the conduction and valence bands?