(Solved): Draw the energy band diagram of a PMOS in accumulation where the substrate doping concentration ...

Draw the energy band diagram of a PMOS in accumulation where the substrate doping concentration is $10^{16}{\mathrm{cm}}^{?3}$. The bandgap is $1.2\mathrm{eV}$ and the intrinsic carrier concentration is $10^9{\mathrm{cm}}^{?3}$. The gate voltage magnitude is $1\mathrm{V}$. The oxide layer is $0.1?\mathrm{m}$ thick and the electric field in it is $5\mathrm{MV}/\mathrm{m}$. Assume that the device is at room temperature $(\mathrm{kT}=0,026\mathrm{eV})$. Show the Fermi levels in the gate metal and the semiconductor. Label all energy scales, as many as you can with numerical values. Show the numerical value of the surface potential in the diagram in eV. Are the dopants donors or acceptors? Is the gate voltage positive or negative?