(Solved): Consider the P-I-N structure shown in the figure. The I region is intrinsic. Determine the quantitie ...

Consider the P-I-N structure shown in the figure. The I region is intrinsic.
Determine the quantities in (a) and (c). Assume that no bias is applied.
(Hint: It may be helpful to think of the I region as a P or N and then let
the doping concentration approach zero. That is, ???????? ???????? 0.)
(a) Find the depletion-layer width (????dep) and its widths on the N side
(????????) and the P side.
(b) Calculate the maximum electric field.
(c) Find the built-in potential.
(d) Now assume that a reverse bias is applied. If the critical field for
breakdown in silicon is 2 × 105 V/cm, compare the breakdown voltages
between the P-I-N structure and a P-N structure (without the I
region) with the doping levels.