(Solved): Consider that the ideal MOS capacitor used to form \( \mathrm{n} \)-channel MOSFET transistors hav ...

Consider that the ideal MOS capacitor used to form \( \mathrm{n} \)-channel MOSFET transistors having a ratio of width over length (W/L) equal to 4 , the electron mobility was measured to be \( 500 \mathrm{~cm}_{2} / \mathrm{V} \)-s. The source terminal and substrate are both connected to a ground potential. The gate voltage is just above the threshold voltage value while the drain is a small positive voltage. Draw the band diagram as function of the lateral distance in the neighborhood of the source region and valid at a depth of zero, i.e. right at the silicon oxide interface. Consider that the Fermi level on the source is at the same level as the conduction band. Consider also that the Fermi level is at a constant level as you transition between the source region and the channel region in the vicinity of the source region. a) Draw the band diagram as function of the lateral distance. b) Based on your band diagram determine if there is an energy barrier for the flow of electrons from the source into the channel region? c) What is the magnitude of that barrier? d) Discuss how an electron flows into the channel region