(Solved): Consider an ideal, silicon PN junction diode with uniform cross section and constant doping on both ...

Consider an ideal, silicon PN junction diode with uniform cross section and constant doping on both sides of the junction. The diode is made from \( 1 \Omega \mathrm{cm} \) P-type and \( 0.2 \Omega \mathrm{cm} \mathrm{N} \)-type materials in which the recombination lifetimes are \( \tau_{n}=10^{-6} \mathrm{~s} \) and \( \tau_{p}=10^{-8} \mathrm{~s} \), respectively. (a) What is the value of the built-in voltage? (b) Calculate the density of the minority carriers at the edge of the depletion layer when the applied voltage is \( 0.589 \mathrm{~V} \) (which is \( 23 \times k T / q \) ). (c) Sketch the majority and minority carrier current as functions of distance from the junction on both sides of the junction. under the bias voltage of part (b). (d) Calculate the location(s) of the plane (or planes) at which the minority carrier and majority carrier currents are equal in magnitude.