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(Solved): A silicon wafer is oxidized in dry \( \mathrm{O}_{2} \) at \( 1100^{\circ} \mathrm{C} \) for 1 hou ...
A silicon wafer is oxidized in dry \( \mathrm{O}_{2} \) at \( 1100^{\circ} \mathrm{C} \) for 1 hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow \( 0.6 \mu \mathrm{m} \) more oxide in wet \( \mathrm{O}_{2} \) at \( 1200^{\circ} \mathrm{C} \) ?
Expert Answer
Given: A silicon wafer is oxidized in dry O2 at 1,1000C for 1 hour. (a). Dry oxidation temperature, =1,100+273