(Solved): 3. Consider an n-type semiconductor as shown in the figure below, doped at Na = 107 cm and w ...

3. Consider an n-type semiconductor as shown in the figure below, doped at Na = 10¹7 cm³³ and with a uniform excess carrier generation rate equal to g' = 5 x 10²¹ cm³ s¹. Assume that Dp = 15 cm²/s and tpo = 5 x 10-7 s. The electric field is zero. Determine the steady-state excess minority carrier concentration versus x if the surface recombination velocity at x =0 is (i) s =0, (ii) s=1000 cm/s and (iii) s = ?o. x = 0 n type X