(Solved): 3. Consider a silicon pn junction. Assume all dopants are ionized at room temperature. Take the ...

3. Consider a silicon $p?n$ junction. Assume all dopants are ionized at room temperature. Take the acceptor concentration to be $10^{?}20/{\mathrm{m}}^{?}3$ and the donor concentration to be $10^{?}21/{\mathrm{m}}^{?}3$. a. What is the built-in voltage? b. For $0.3\mathrm{V}$ forward bias, what is the excess electron current injected into the $\mathrm{p}$-type material ? c. What is the excess hole current injected into the n-type material ? d. What will happen to all the extra electrons?